Datasheet > QPD1025

QPD1025

更新时间： 2024-12-02 01:12:11

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
18页	1435K
描述
1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-Matched Transistor

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QPD1025 数据手册

QPD1025

1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor

Product Overview

The Qorvo QPD1025 is a 1500 W (P_3dB) discrete GaN on SiC

HEMT which operates from 1.0 to 1.1 GHz. Input pre-match

within the package results in ease of external board match

and saves board space. The device is in an industry standard

air cavity package and is ideally suited for IFF, avionics and

test instrumentation. The device can support both CW and

pulsed operations.

Lead-free and ROHS compliant

4-lead NI-1230 Package (Earless)

Evaluation boards are available upon request.

Key Features

• Frequency: 1.0 to 1.1 GHz

• Output Power (P_3dB)¹: 1660 W

• Linear Gain¹: 22.9 dB

Functional Block Diagram

• Typical PAE_3dB¹: 78.5%

• Operating Voltage: 65 V

• CW and Pulse capable

Note 1: @ 1.0 GHz Load Pull

Applications

• IFF Transponders

• Avionics

Ordering info

Part No.

ECCN Description

QPD1025

EAR99 1.0 – 1.1 GHz Transistor

QPD1025S2

QPD1025EVB1

EAR99 2 Piece Sample Bag

EAR99 1.0 – 1.1 GHz Evaluation Board

Datasheet Rev. B │ Subject to change without notice

www.qorvo.com

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与QPD1025相关器件

型号	品牌	获取价格	描述	数据表
QPD1025EVB1	TRIQUINT	获取价格	1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-M
QPD1025L	TRIQUINT	获取价格	1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-M
QPD1025LEVB1	TRIQUINT	获取价格	1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-M
QPD1025LS2	TRIQUINT	获取价格	1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-M
QPD1025S2	TRIQUINT	获取价格	1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-M
QPD1223	QT	获取价格	Transistor Output Slotted Switch, 1-Channel,
QPD-15	QUALTEK	获取价格	15Watts Single Output
QPD-150	QUALTEK	获取价格	150Watts Single Output
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