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QPD2194 PDF预览

QPD2194

更新时间: 2024-11-21 01:05:39
品牌 Logo 应用领域
TRIQUINT /
页数 文件大小 规格书
14页 884K
描述
300 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor

QPD2194 数据手册

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QPD2194  
300ꢀW, 48ꢀV, 1.8-2.2 GHz GaN RF Power Transistor  
Product Description  
The QPD2194 is a discrete GaN on SiC HEMT which  
operates from 1.8-2.2 GHz. The device is a single stage  
pre-matched power amplifier transistor.  
The QPD2194 can be used in Doherty architecture for the  
final stage of a base station power amplifier for macrocell  
high efficiency systems.  
2 Lead NI400 Package  
QPD2194 can deliver PSAT of 371 W at +48 V operation.  
Lead-free and ROHS compliant.  
Product Features  
Operating Frequency Range: 1.8-2.2 GHz  
Operating Drain Voltage: +48 V  
Maximum Output Power (PSAT): 371 W  
Maximum Drain Efficiency: 78.8%  
Functional Block Diagram  
Efficiency-Tuned P3dB Gain: 18.0 dB  
2-lead, earless, ceramic flange NI400 package  
Applications  
W-CDMA / LTE  
Macrocell Base Station, B3-B1  
Active Antenna  
Ordering Information  
Part No.  
QPD2194S2  
QPD2194SQ  
QPD2194SR  
ECCN Description  
EAR99  
EAR99  
EAR99  
Box (2 Samples Each)  
Tray (25 Samples)  
Reel (100 Samples)  
QPD2194PCB4B01 EAR99  
1.805-2.17 GHz Eval. Board  
- 1 of 14 -  
Rev. A  
www.qorvo.com  

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