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QPD2195SQ PDF预览

QPD2195SQ

更新时间: 2024-11-06 01:05:39
品牌 Logo 应用领域
TRIQUINT /
页数 文件大小 规格书
12页 1479K
描述
400 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor

QPD2195SQ 数据手册

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QPD2195  
400ꢀW, 48ꢀV, 1.8-2.2 GHz GaN RF Power Transistor  
Product Description  
The QPD2195 is a discrete GaN on SiC HEMT which  
operates from 1.8-2.2 GHz. The device is a single stage  
pre-matched power amplifier transistor.  
The QPD2195 can be used in Doherty architecture for the  
final stage of a base station power amplifier for macrocell  
high efficiency systems.  
2 Lead NI780 Package  
QPD2195 can deliver P3dB of 400 W at +48 V operation.  
Lead-free and ROHS compliant.  
Product Features1  
Operating Frequency Range: 1.8-2.2 GHz  
Operating Drain Voltage: +48 V  
Maximum Output Power1 (P3dB): 400 W  
Maximum Drain Efficiency1: 75.4%  
Efficiency-Tuned P3dB Gain1: 19.1 dB  
Functional Block Diagram  
2-lead, earless, ceramic flange NI780 package  
Note 1: @ 2.11 GHz Load Pull  
Applications  
W-CDMA / LTE  
Macrocell Base Station, B3-B1  
Active Antenna  
Ordering Information  
Part No.  
QPD2195S2  
QPD2195SQ  
QPD2195SR  
ECCN Description  
EAR99  
EAR99  
EAR99  
Box (2 Samples Each)  
Tray (25 Samples)  
Reel (100 Samples)  
QPD2195PCB4B01 EAR99  
1.805-2.170 GHz Eval. Board  
- 1 of 12 -  
Rev. A  
www.qorvo.com  

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