Datasheet > QPD2195SQ

QPD2195SQ

更新时间： 2024-11-25 01:05:39

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
12页	1479K
描述
400 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor

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QPD2195SQ 数据手册

QPD2195

400ꢀW, 48ꢀV, 1.8-2.2 GHz GaN RF Power Transistor

Product Description

The QPD2195 is a discrete GaN on SiC HEMT which

operates from 1.8-2.2 GHz. The device is a single stage

pre-matched power amplifier transistor.

The QPD2195 can be used in Doherty architecture for the

final stage of a base station power amplifier for macrocell

high efficiency systems.

2 Lead NI780 Package

QPD2195 can deliver P_3dBof 400 W at +48 V operation.

Lead-free and ROHS compliant.

Product Features¹

 Operating Frequency Range: 1.8-2.2 GHz

 Operating Drain Voltage: +48 V

 Maximum Output Power¹(P_3dB): 400 W

 Maximum Drain Efficiency¹: 75.4%

 Efficiency-Tuned P3dB Gain¹: 19.1 dB

Functional Block Diagram

 2-lead, earless, ceramic flange NI780 package

Note 1: @ 2.11 GHz Load Pull

Applications

 W-CDMA / LTE

 Macrocell Base Station, B3-B1

 Active Antenna

Ordering Information

Part No.

QPD2195S2

QPD2195SQ

QPD2195SR

ECCN Description

EAR99

Box (2 Samples Each)

Tray (25 Samples)

Reel (100 Samples)

QPD2195PCB4B01 EAR99

1.805-2.170 GHz Eval. Board

- 1 of 12 -

Rev. A

www.qorvo.com

12 3 4 5 6 7...12

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