QPD1025L
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Product Overview
The Qorvo QPD1025L is a 1500 W (P3dB) discrete GaN on
SiC HEMT which operates from 1.0 to 1.1 GHz. Input pre-
match within the package results in ease of external board
match and saves board space. The device is in an industry
standard air cavity package and is ideally suited for IFF,
avionics and test instrumentation. The device can support
both CW and pulsed operations.
Lead-free and ROHS compliant
4-lead NI-1230 Package (Eared)
Evaluation boards are available upon request.
Key Features
• Frequency: 1.0 to 1.1 GHz
• Output Power (P3dB)1: 1660 W
• Linear Gain1: 22.9 dB
Functional Block Diagram
• Typical PAE3dB1: 78.5%
• Operating Voltage: 65 V
• CW and Pulse capable
Note 1: @ 1.0 GHz Load Pull
Applications
• IFF Transponders
• Avionics
Ordering info
Part No.
ECCN Description
QPD1025L
EAR99 1.0 – 1.1 GHz Transistor
QPD1025LS2
QPD1025LEVB1
EAR99 2 Piece Sample Bag
EAR99 1.0 – 1.1 GHz Evaluation Board
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
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