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QPD1025L PDF预览

QPD1025L

更新时间: 2024-01-24 00:01:28
品牌 Logo 应用领域
TRIQUINT /
页数 文件大小 规格书
18页 1438K
描述
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor

QPD1025L 数据手册

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QPD1025L  
1500 W, 65 V, 1.0 1.1 GHz, GaN RF Input-Matched Transistor  
Measured Load-Pull Smith Charts 1, 2, 3  
Notes:  
1. Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.  
2. The performance shown below is for only half of the device out of the two independent amplification paths.  
3. See page 13 for load pull reference planes where the performance was measured.  
1.1GHz, Load-pull  
Zs(fo) = 0.94-2.29i  
Max Power is 59dBm  
Zs(2fo) = 0.47-0.06i  
Zs(3fo) = 0.52+0.8i  
Zl(2fo) = 0.8+0.69i  
Zl(3fo) = NaN  
at Z = 2.53+0.746i  
= -0.0655+0.1438i  
Max Gain is 20.4dB  
at Z = 1.111+1.709i  
= -0.2444+0.5171i  
Max PAE is 76.9%  
at Z = 2.221+1.322i  
= -0.08+0.2735i  
20.1  
19.6  
19.1  
18.6  
18.1  
73.9  
71.9  
17.6  
75.9  
69.9  
67.9  
65.9  
63.9  
57.5  
57.7  
57.9  
58.1  
58.3  
58.5  
58.7  
58.9  
Power  
Gain  
PAE  
Zo = 3  
3dB Compression Referenced to Peak Gain  
Datasheet Rev. B │ Subject to change without notice  
www.qorvo.com  
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