Datasheet > QPD1025L

QPD1025L

更新时间： 2022-02-26 12:34:24

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
18页	1438K
描述
1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-Matched Transistor

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QPD1025L 数据手册

QPD1025L

1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor

RF Characterization – 1.0 – 1.1 GHz EVB Performance at 1.05 GHz ¹

Parameter

Linear Gain, G_LIN

Min

–

Typ

21.2

Max

–

Units

ꢁdB

Output Power at 3dB compression point, P3dB

–

1461

Drain Efficiency at 3dB compression point,

DEFF3dB

Gain at 3dB compression point, G3dB

–

73.2

18.2

–

Notes:

1. V_D= 65ꢁV, I_DQ= 1.5ꢁA (combined), Temp = +25ꢁ°C, Pulse Width = 100 us, Duty Cycle = 10%

RF Characterization – Mismatch Ruggedness at 1.0 GHz ^{1, 2, 3}

Symbol Parameter

dB Compression

Typical

VSWR

Impedance Mismatch Ruggedness

ꢁ10:1

Notes:

1. Test conditions unless otherwise noted: T_A= 25 °C, V_D= 65 V, I_DQ= 1.5 A (combined)

2. Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector

3. Pulse: 100us, 10% Duty cycle

Datasheet Rev. B │ Subject to change without notice

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