Datasheet > QPD1025LEVB1

QPD1025LEVB1

更新时间： 2022-02-26 12:34:24

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
18页	1438K
描述
1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-Matched Transistor

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QPD1025LEVB1 数据手册

QPD1025L

1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor

Product Overview

The Qorvo QPD1025L is a 1500 W (P_3dB) discrete GaN on

SiC HEMT which operates from 1.0 to 1.1 GHz. Input pre-

match within the package results in ease of external board

match and saves board space. The device is in an industry

standard air cavity package and is ideally suited for IFF,

avionics and test instrumentation. The device can support

both CW and pulsed operations.

Lead-free and ROHS compliant

4-lead NI-1230 Package (Eared)

Evaluation boards are available upon request.

Key Features

• Frequency: 1.0 to 1.1 GHz

• Output Power (P_3dB)¹: 1660 W

• Linear Gain¹: 22.9 dB

Functional Block Diagram

• Typical PAE_3dB¹: 78.5%

• Operating Voltage: 65 V

• CW and Pulse capable

Note 1: @ 1.0 GHz Load Pull

Applications

• IFF Transponders

• Avionics

Ordering info

Part No.

ECCN Description

QPD1025L

EAR99 1.0 – 1.1 GHz Transistor

QPD1025LS2

QPD1025LEVB1

EAR99 2 Piece Sample Bag

EAR99 1.0 – 1.1 GHz Evaluation Board

Datasheet Rev. B │ Subject to change without notice

www.qorvo.com

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