Datasheet > QPD1025L

QPD1025L

更新时间： 2024-01-25 00:04:36

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
18页	1438K
描述
1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-Matched Transistor

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QPD1025L 数据手册

QPD1025L

1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor

Absolute Maximum Ratings ^{1, 2, 3}

Recommended Operating Conditions ^{1, 2, 3, 4}

Parameter

Min Typ Max Units

Parameter

Rating

Units

Operating Temp. Range

Drain Voltage Range, V_D

Drain Bias Current, I_DQ

−40 +25 +85

ꢁ°C

Breakdown Voltage,BV_DG

Gate Voltage Range, V_G

Drain Current, I_DMAX

225

-7 to +2

142

–

+65 +70

1.5

Drain Current, I_D

–

−2.8

–

Gate Current Range, I_G

Power Dissipation, Pulsed,

See pg. 12

Gate Voltage, V_G

–

758

Channel Temperature (T_CH)

Power Dissipation (P_D) ^2,4

Power Dissipation (P_D), CW ²

Notes:

1. Electrical performance is measured under conditions noted

in the electrical specifications table. Specifications are not

guaranteed over all recommended operating conditions

2. Package base at 85 °C

250

685

496

°C

P_DISS

–

RF Input Power, Pulsed, P_IN

Channel Temperature, T_CH

46.2

275

dBm

°C

–

Mounting Temperature

(30ꢀSeconds)

320^ꢁ

°C

Storage Temperature

Notes:

−65 to +150

3. To be adjusted to desired I_DQ

4. Pulsed, 1000us PW, 20% DC

1. Operation of this device outside the parameter ranges

given above may cause permanent damage

2. Pulsed, 1000us PW, 20% DC, Package base at 85 °C

3. Pulsed, 100us PW, 10% DC, T = 25 °C

Measured Load Pull Performance – Power Tuned ^{1, 2}

Parameter

Typical Values

Units

GHz

dBm

Frequency, F

1.0

1.1

Output Power at 3dB compression, P_3dB

59.2

59.0

Power Added Efficiency at 3dB compression,

PAE_3dB

Gain at 3dB compression, G_3dB

Notes:

70.2

19.5

75.5

19.2

1. Test conditions unless otherwise noted: T_A= 25 °C, V_D= 65 V, I_DQ= 750 mA (half device)

2. Pulsed, 100 us Pulse Width, 10% Duty Cycle.

Measured Load Pull Performance – Efficiency Tuned ^{1, 2}

Parameter

Typical Values

Units

GHz

dBm

Frequency, F

1.0

1.1

Output Power at 3dB compression, P_3dB

57.7

58.3

Power Added Efficiency at 3dB compression,

PAE_3dB

Gain at 3dB compression, G_3dB

Notes:

78.5

19.9

76.9

19.6

1. Test conditions unless otherwise noted: T_A= 25 °C, V_D= 65 V, I_DQ= 750 mA (half device)

2. Pulsed, 100 us Pulse Width, 10% Duty Cycle.

Datasheet Rev. B │ Subject to change without notice

www.qorvo.com

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