Datasheet > QPD1019EVB01

QPD1019EVB01

更新时间： 2024-12-02 01:12:11

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
19页	2224K
描述
500W, 50V, 2.9 â 3.3 GHz, GaN RF IMFET

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QPD1019EVB01 数据手册

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Product Overview

The QPD1019 is a 500 W (P_3dB) internally matched discrete

GaN on SiC HEMT which operates from 2.9 to 3.3 GHz on

a 50V supply rail. The device is GaN IMFET fully matched

to 50 Ω in an industry standard air cavity package and is

ideally suited for military radar.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Key Features

17.40 xꢀ24.00ꢀxꢀ4.31ꢀmm

• Frequency: 2.9 to 3.3 GHz

• Output Power (P_3dB)¹: 590 W

• Linear Gain¹: 15.5 dB

• Typical PAE_3dB¹: 67%

• Operating Voltage: 50 V

• Low thermal resistance package

• Pulse capable

Functional Block Diagram

Note 1: @ 3.1 GHz

Applications

• Military radar

• Civilian radar

• Test instrumentation

Ordering info

Part No.

QPD1019

ECCN

Description

3A001.B.3.A

EAR99

Tray of 18 QPD1019

Pack of 2 QPD1019

2.9 – 3.3 GHz EVB

QPD1019S2

QPD1019EVB01

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

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QPD1020EVB01	TRIQUINT	获取价格	2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1020S2	TRIQUINT	获取价格	2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1020SQ	TRIQUINT	获取价格	2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1020SR	TRIQUINT	获取价格	2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
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QPD1022S2	TRIQUINT	获取价格	10W, 32V, DC â 12 GHz, GaN RF Transistor
QPD1022SQ	TRIQUINT	获取价格	10W, 32V, DC â 12 GHz, GaN RF Transistor