Datasheet > QPD1020

QPD1020

更新时间： 2022-02-26 11:15:00

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
22页	1268K
描述
2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

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QPD1020 数据手册

QPD1020

2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

Product Overview

The Qorvo QPD1020 is a 30 W (P_3dB), 50 -input matched

discrete GaN on SiC HEMT which operates from 2.7 to 3.5

GHz and 50 V supply. The integrated input matching

network enables wideband gain and power performance,

while the output can be matched on board to optimize

power and efficiency for any region within the band.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

6 x 5 x 1.09 mm DFN

Key Features

• Frequency: 2.7 to 3.5 GHz

• Output Power (P_3dB)¹: 31 W

• Linear Gain¹: 18.4 dB

• Typical PAE_3dB¹: 64 %

Functional Block Diagram

• Operating Voltage: 50 V

• CW and Pulse capable

Note 1: @ 3.1 GHz Load Pull

Input

Matching

Applications

•

Military radar

• Civilian radar

• Test instrumentation

Ordering info

Part No.

ECCN Description

QPD1020S2

QPD1020SQ

QPD1020SR

EAR99

Sample of 2 QPD1020

Sample of 25 QPD1020

Sample of 100 QPD1020

2.7 – 3.1 GHz EVB

QPD1020EVB01 EAR99

Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice

www.qorvo.com

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