Datasheet > QPD1020S2

QPD1020S2

更新时间： 2024-12-02 01:06:11

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
22页	1268K
描述
2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

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QPD1020S2 数据手册

QPD1020

2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

Product Overview

The Qorvo QPD1020 is a 30 W (P_3dB), 50 -input matched

discrete GaN on SiC HEMT which operates from 2.7 to 3.5

GHz and 50 V supply. The integrated input matching

network enables wideband gain and power performance,

while the output can be matched on board to optimize

power and efficiency for any region within the band.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

6 x 5 x 1.09 mm DFN

Key Features

• Frequency: 2.7 to 3.5 GHz

• Output Power (P_3dB)¹: 31 W

• Linear Gain¹: 18.4 dB

• Typical PAE_3dB¹: 64 %

Functional Block Diagram

• Operating Voltage: 50 V

• CW and Pulse capable

Note 1: @ 3.1 GHz Load Pull

Input

Matching

Applications

•

Military radar

• Civilian radar

• Test instrumentation

Ordering info

Part No.

ECCN Description

QPD1020S2

QPD1020SQ

QPD1020SR

EAR99

Sample of 2 QPD1020

Sample of 25 QPD1020

Sample of 100 QPD1020

2.7 – 3.1 GHz EVB

QPD1020EVB01 EAR99

Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice

www.qorvo.com

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与QPD1020S2相关器件

型号	品牌	获取价格	描述	数据表
QPD1020SQ	TRIQUINT	获取价格	2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1020SR	TRIQUINT	获取价格	2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matc
QPD1022	TRIQUINT	获取价格	10W, 32V, DC â 12 GHz, GaN RF Transistor
QPD1022EVB01	TRIQUINT	获取价格	10W, 32V, DC â 12 GHz, GaN RF Transistor
QPD1022S2	TRIQUINT	获取价格	10W, 32V, DC â 12 GHz, GaN RF Transistor
QPD1022SQ	TRIQUINT	获取价格	10W, 32V, DC â 12 GHz, GaN RF Transistor
QPD1022SR	TRIQUINT	获取价格	10W, 32V, DC â 12 GHz, GaN RF Transistor
QPD1025	TRIQUINT	获取价格	1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-M
QPD1025EVB1	TRIQUINT	获取价格	1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-M
QPD1025L	TRIQUINT	获取价格	1500 W, 65 V, 1.0 â 1.1 GHz, GaN RF Input-M