Datasheet > QPD1019EVB01

QPD1019EVB01

更新时间： 2022-02-26 12:04:28

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
19页	2224K
描述
500W, 50V, 2.9 â 3.3 GHz, GaN RF IMFET

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QPD1019EVB01 数据手册

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Load-Pull Smith Charts^{1, 2, 3}

Notes:

1. V_D= 50 V, I_DQ= 750 mA, 100 uS PW, 10% DC pulsed. Performance is at 3dB gain compression referenced to peak gain.

2. See page 14 for load-pull and source-pull reference planes. 50- load-pull TRL fixtures are built with 20-mil RO4350B material.

3. NaN means the impedances are either undefined or varying in load-pull system.

2.9GHz, Load-pull

Max Power is 57.7dBm

at Z = 43.526-11.413i

•

Zs(1fo) = 50

Zs(2fo) = 49.96+24i

Zs(3fo) = 16.7+0.11i

Ω

= -0.0535-0.1286i

Max Gain is 13.6dB

Ω

•

at Z = 72.284+38.391i

= 0.2556+0.2337i

Ω

Max PAE is 66%

at Z = 38.299+18.634i

•

Ω

= -0.0842+0.2288i

12.9

13.4

12.4

64.1

11.9

62.1

60.1

58.1

57.6

57.4

57.2

Power

Gain

PAE

Zo = 50

3dB Compression Referenced to Peak Gain

Ω

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

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