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QPD1018 PDF预览

QPD1018

更新时间: 2024-02-13 13:30:23
品牌 Logo 应用领域
TRIQUINT /
页数 文件大小 规格书
17页 1827K
描述
500W, 50V, 2.7 – 3.1 GHz, GaN RF IMFET

QPD1018 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.82JESD-609代码:e4
湿度敏感等级:3峰值回流温度(摄氏度):260
端子面层:GOLD OVER NICKEL处于峰值回流温度下的最长时间:NOT SPECIFIED

QPD1018 数据手册

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QPD1018  
500W, 50V, 2.7 3.1 GHz, GaN RF IMFET  
Product Overview  
The QPD1018 is a 500 W (P3dB) internally matched discrete  
GaN on SiC HEMT which operates from 2.7 to 3.1 GHz on  
a 50V supply rail. The device is GaN IMFET fully matched  
to 50 Ω in an industry standard air cavity package and is  
ideally suited for military radar.  
Lead-free and ROHS compliant  
Evaluation boards are available upon request.  
17.40 xꢀ24.00ꢀxꢀ4.31ꢀmm  
Key Features  
Frequency: 2.7 to 3.1 GHz  
Output Power (P3dB)1: 575 W  
Linear Gain1: 17.7 dB  
Typical PAE3dB1: 67.9%  
Operating Voltage: 50 V  
Low thermal resistance package  
Pulse capable  
Functional Block Diagram  
Note 1: @ 2.9 GHz  
Applications  
Military radar  
Civilian radar  
Test instrumentation  
Ordering info  
Part No.  
ECCN  
Description  
QPD1018  
3A001.B.3.A  
3A001.B.3.A  
EAR99  
Tray of 18 QPD1018  
Pack of 2 QPD1018  
2.7 3.1 GHz EVB  
QPD1018S2  
QPD1018EVB  
Datasheet Rev. A, Jun 9, 2017 | Subject to change without notice  
www.qorvo.com  
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