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QPD1018 PDF预览

QPD1018

更新时间: 2024-01-24 23:10:40
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TRIQUINT /
页数 文件大小 规格书
17页 1827K
描述
500W, 50V, 2.7 – 3.1 GHz, GaN RF IMFET

QPD1018 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.82JESD-609代码:e4
湿度敏感等级:3峰值回流温度(摄氏度):260
端子面层:GOLD OVER NICKEL处于峰值回流温度下的最长时间:NOT SPECIFIED

QPD1018 数据手册

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QPD1018  
500W, 50V, 2.7 3.1 GHz, GaN RF IMFET  
Absolute Maximum Ratings1  
Recommended Operating Conditions1  
Parameter  
Min Typ Max Units  
Parameter  
Rating  
Units  
Operating Temp. Range  
Drain Voltage Range, VD  
Drain Bias Current, IDQ  
Drain Current, ID  
−40 +25 +85  
ꢁ°C  
Breakdown Voltage,BVDG  
Gate Voltage Range, VG  
Drain Current  
+150  
-7 to +2  
20  
V
V
+28 +50 +55  
V
750  
15  
mA  
A
A
Gate Current Range, IG  
See page 4.  
mA  
4
Gate Voltage, VG  
−2.8  
V
Power Dissipation, 10% DC  
100 uS PW, PD , T = 85°C  
522  
W
Channel Temperature (TCH)  
250  
°C  
Power Dissipation, Pulsed  
(PD)2, 3  
RF Input Power, 10% DC  
100 uS PW, 2.9 GHz, T =  
25°C  
472  
W
+49  
dBm  
Notes:  
1. Electrical performance is measured under conditions noted  
in the electrical specifications table. Specifications are not  
guaranteed over all recommended operating conditions.  
2. Package base at 85°C  
3. Pulse Width = 100 uS, Duty Cycle = 10%  
4. To be adjusted to desired IDQ  
Channel Temperature, TCH  
275  
320ꢁ  
°C  
°C  
°C  
Mounting Temperature  
(30ꢀSeconds)  
Storage Temperature  
−65 to +150  
Notes:  
1. Operation of this device outside the parameter ranges  
given above may cause permanent damage.  
Pulsed Characterization Load-Pull Performance Power Tuned1  
Parameters  
Frequency, F  
Linear Gain, GLIN  
Typical Values  
Unit  
GHz  
dB  
2.7  
2.9  
3.1  
16.1  
16.4  
14.6  
Output Power at 3dB  
57.7  
57.6  
57.5  
dBm  
compression point, P3dB  
Power-Added-Efficiency at 3dB  
compression point, PAE3dB  
59.1  
13.1  
56.6  
13.4  
56.1  
11.6  
%
Gain at 3dB compression point  
dB  
Notes:  
1. Test conditions unless otherwise noted: VD = +50V, IDQ = 750ꢁmA, Temp = 25°C, 100 uS PW, 10% DC  
Pulsed Characterization Load-Pull Performance Efficiency Tuned1  
Parameters  
Frequency, F  
Linear Gain, GLIN  
Typical Values  
Unit  
GHz  
dB  
2.7  
2.9  
3.1  
16.9  
17.7  
15.8  
Output Power at 3dB  
56.5  
68.6  
13.9  
56.1  
67.9  
14.7  
55.8  
65.2  
12.8  
dBm  
%
compression point, P3dB  
Power-Added-Efficiency at 3dB  
compression point, PAE3dB  
Gain at 3dB compression point,  
G3dB  
dB  
Notes:  
1. Test conditions unless otherwise noted: VD = +50V, IDQ = 750mA, Temp = 25°C, 100 uS PW, 10% DC  
Datasheet Rev. A, Jun 9, 2017 | Subject to change without notice  
www.qorvo.com  
- 2 of 17 -  

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