Datasheet > QPD1016EVB01

QPD1016EVB01

更新时间： 2024-09-25 01:22:35

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描述
50 V, 500 W GaN RF Transistor

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QPD1016EVB01 数据手册

QPD1016

DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor

Product Overview

The Qorvo QPD1016 is a 500 W (P_3dB) pre-matched discrete

GaN on SiC HEMT which operates from DC to 1.7 GHz and

50 V supply. The device is in an industry standard air cavity

package and is ideally suited for IFF, avionics, military and

civilian radar, and test instrumentation. The device can

support pulsed and linear operations.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

NI-780 Package

Key Features

 Frequency: DC to 1.7 GHz

 Output Power (P_3dB)¹: 680 W

 Linear Gain¹: 23.9 dB

Functional Block Diagram

 Typical PAE_3dB¹: 77.4%

 Operating Voltage: 50 V

 CW and Pulse capable

Note 1: @ 1.3 GHz Load Pull

Applications

 IFF

 Avionics

 Military and civilian radar

 Test instrumentation

Ordering info

Part No.

ECCN Description

DCꢀ–ꢀ1.7ꢀGHz, 50 V, 500 W GaN RF

Transistor

QPD1016

EAR99

QPD1016EVB01 EAR99

1.2 – 1.4 GHz EVB

Datasheet Rev. A, December 16, 2016 | Subject to change without

notice

www.qorvo.com

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