Datasheet > QPD1014S2

QPD1014S2

更新时间： 2024-09-25 01:12:55

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
21页	2483K
描述
GaN RF Input-Matched Transistor

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QPD1014S2 数据手册

QPD1014

15W, 50V, 30 – 1200 MHz, GaN RF Input-Matched Transistor

General Description

The QPD1014 is a 15W (P3dB), 50Ω-input matched

discrete GaN on SiC HEMT which operates from 30MHz to

1200MHz on a 50V supply rail. The integrated input

matching network enables wideband gain and power

performance, while the output can be matched on board to

optimize power and efficiency for any region within the

band. It is ideally suited for basestation, radar and

communications applications and can support both CW and

pulsed mode of operations.

8 Pin DFN (6 xꢀ5ꢀxꢀ0.85ꢀmm)

The device is housed in a 6 x 5 mm surface mount DFN

package.

Product Features

 Frequency: 30 to 1200 MHz

 Output Power (P_3dB): 12.5 W¹

 Linear Gain: 18.4 dB¹

 Typical PAE_3dB: 69.5%¹

 Operating Voltage: 50 V

 Low thermal resistance package

 CW and Pulse capable

 6 x 5 mm package

Functional Block Diagram

Note 1: @ 1 GHz (Loadpull)

Applications

 Basestation

 Active Antenna

 Military radar

 Civilian radar

 Land mobile and military radio communications

 Jammers

Ordering info

Part No.

QPD1014

ECCN Description

EAR99 30ꢀ–1200ꢀMHz RF Transistor

QPD1014S2

EAR99 30 –1200MHz RF Transistor Sample

QPD1014EVB01 EAR99 30 –1000MHz EVB

Rev. A

Disclaimer: Subject to change without notice

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