Datasheet > QPD1011SQ

QPD1011SQ

更新时间： 2024-02-24 10:57:49

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
25页	1455K
描述
30 â 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor

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QPD1011SQ 数据手册

QPD1011

30 – 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor

Product Overview

The Qorvo QPD1011 is a 7W (P_3dB), 50 input matched

discrete GaN on SiC HEMT which operates from 30 MHz to

1.2 GHz. The integrated input matching network enables

wideband gain and power performance, while the output can

be matched on board to optimize power and efficiency for

any region within the band.

The device is housed in a 5 x 6 mm leadless SMT package

that saves real estate of already space-constrained handheld

radios.

Lead-free and ROHS compliant.

5 x 6 x 1.09mm Package

Evaluation boards are available upon request.

Key Features

• Frequency: 30 to 1200 MHz

• Output Power (P_3dB)¹: 8.7 W

• Linear Gain¹: 21 dB

Functional Block Diagram

• Typical PAE_3dB¹: 60 %

• Operating Voltage: 50 V

• CW and Pulse capable

Note 1: @ 1 GHz Load Pull

Input

Matching

Applications

• Military radar

• Civilian radar

• Land mobile and military radio communications

• Test instrumentation

• Wideband or narrowband amplifiers

• Jammers

Ordering info

Part No.

QPD1011EVB01 EAR99

ECCN Description

30 – 1000 MHz EVB

Pack of 2 QPD1011

Pack of 25 QPD1011

Pack of 100 QPD1011

QPD1011S2

QPD1011SQ

QPD1011SR

EAR99

Datasheet Rev. A, March 24, 2017 | Subject to change without notice

www.qorvo.com

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QPD1013S2	TRIQUINT	获取价格	150W, 65V, DC â 2.7 GHz, GaN RF Transistor
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QPD1013SR	TRIQUINT	获取价格	150W, 65V, DC â 2.7 GHz, GaN RF Transistor
QPD1014	TRIQUINT	获取价格	GaN RF Input-Matched Transistor
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