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QPD1011EVB01 PDF预览

QPD1011EVB01

更新时间: 2024-12-02 01:06:07
品牌 Logo 应用领域
TRIQUINT /
页数 文件大小 规格书
25页 1455K
描述
30 – 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor

QPD1011EVB01 数据手册

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QPD1011  
30 – 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor  
Product Overview  
The Qorvo QPD1011 is a 7W (P3dB), 50 input matched  
discrete GaN on SiC HEMT which operates from 30 MHz to  
1.2 GHz. The integrated input matching network enables  
wideband gain and power performance, while the output can  
be matched on board to optimize power and efficiency for  
any region within the band.  
The device is housed in a 5 x 6 mm leadless SMT package  
that saves real estate of already space-constrained handheld  
radios.  
Lead-free and ROHS compliant.  
5 x 6 x 1.09mm Package  
Evaluation boards are available upon request.  
Key Features  
Frequency: 30 to 1200 MHz  
Output Power (P3dB)1: 8.7 W  
Linear Gain1: 21 dB  
Functional Block Diagram  
Typical PAE3dB1: 60 %  
Operating Voltage: 50 V  
CW and Pulse capable  
1
8
Note 1: @ 1 GHz Load Pull  
7
6
2
3
Input  
Matching  
NW  
Applications  
Military radar  
Civilian radar  
5
4
Land mobile and military radio communications  
Test instrumentation  
Wideband or narrowband amplifiers  
Jammers  
Ordering info  
Part No.  
QPD1011EVB01 EAR99  
ECCN Description  
30 – 1000 MHz EVB  
Pack of 2 QPD1011  
Pack of 25 QPD1011  
Pack of 100 QPD1011  
QPD1011S2  
QPD1011SQ  
QPD1011SR  
EAR99  
EAR99  
EAR99  
Datasheet Rev. A, March 24, 2017 | Subject to change without notice  
www.qorvo.com  
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