Datasheet > PTFA220041M

PTFA220041M

更新时间： 2024-11-23 09:58:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管场效应晶体管射频
页数	文件大小	规格书
18页	1204K
描述
High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

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中文翻译

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PTFA220041M 数据手册

PTFA220041M

Confidential, Limited Internal Distribution

High Power RF LDMOS Field Effect Transistor

4 W, 700 – 2200 MHz

Description

The PTFA220041M is an unmatched 4-watt LDMOS FET intended

for power ampliﬁer applications in the 700 MHz to 2200 MHz oper-

ating range. This LDMOS device offers excellent gain, efﬁciency

and linearity performance in a small, overmolded plastic package.

PTFA220041M

Package PG-SON-10

Features

Two-tone Drive-up

V_DD= 28 V, I_DQ= 50 mA,

ƒ₁= 1841.9 MHz, ƒ₂= 1842 MHz

•

Typical two-carrier WCDMA performance,

1842 MHz, 8 dB PAR

- P = 27 dBm Avg

OUT

- ACPR = –44 dBc

Typical CW performance, 1842 MHz, 28 V

- P

= 37 dBm

OUT

- Efﬁciency = 53.5%

- Gain = 17.9 dB

Typical CW performance, 940 MHz, 28 V

Gain

- P

= 37.5 dBm

OUT

- Efﬁciency = 57%

- Gain = 19.7 dB

•

Capable of handling 10:1 VSWR @ 28 V, 5 W

(CW) output power

Efficiency

Integrated ESD protection : Human Body Model,

Class 2 (minimum)

•

Excellent thermal stability

Output Power, PEP (dBm)

Pb-free and RoHS compliant

Two-tone Measurements (not subject to production test - veriﬁed by design / characterization in Inﬁneon test ﬁxture)

= 28 V, I

= 50 mA, P

= 4 W PEP, ƒ = 1842 MHz, tone spacing = 1 MHz

OUT

Characteristic

Gain

Symbol

Min

18.5

Typ

Max

—

Unit

Drain Efﬁciency

IMD

IRL

37.5

–29

–8

—

Intermodulation Distortion

Input Return Loss

—

–28

–7

dBc

—

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 18

Rev. 08, 2010-06-07

12 3 4 5 6 7...18

中文翻译

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