Datasheet > PTFA220081M

PTFA220081M

更新时间： 2024-11-20 09:58:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管场效应晶体管射频
页数	文件大小	规格书
17页	1119K
描述
High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

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中文翻译

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PTFA220081M 数据手册

PTFA220081M

Confidential, Limited Internal Distribution

High Power RF LDMOS Field Effect Transistor

8 W, 700 – 2200 MHz

Description

The PTFA220081M an unmatched 8-watt LDMOS FET suitable for

power ampliﬁers applications with frequencies from 700 MHz to 2200

MHz. This LDMOS transistor offers excellent gain, efﬁciency and

linearity performance in a small overmolded plastic package.

PTFA220081M

Package PG-SON-10

Features

Two-tone Drive-up

V_DD= 28 V, I_DQ= 100 mA,

ƒ₁= 939.5 MHz, ƒ₂= 940.5 MHz

•

Typical two-carrier WCDMA performance,

8 dB PAR

- P = 33 dBm Avg

OUT

- ACPR = –40 dBc

-10

-20

-30

-40

-50

-60

Typical CW performance, 940 MHz, 28 V

- P

= 40 dBm

OUT

Efficiency

- Efﬁciency = 59%

- Gain = 20 dB

Typical CW performance, 2140 MHz, 28 V

- P

= 40 dBm

IMD 3rd

IMD 5th

OUT

- Efﬁciency = 50%

- Gain = 15 dB

•

Capable of handling 10:1 VSWR @ 28 V, 8 W

(CW) output power

Integrated ESD protection : Human Body Model,

Class 2 (minimum)

•

Excellent thermal stability

Output Power, PEP (dBm)

Pb-free and RoHS compliant

RF Characteristics

Two-tone Measurements (not subject to production test – veriﬁed by design / characterization in Inﬁneon test ﬁxture)

= 28 V, I

= 100 mA, P

= 8 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz

OUT

Characteristic

Gain

Symbol

Min

—

Typ

Max

—

Unit

Drain Efﬁciency

—

Intermodulation Distortion

IMD

—

–31

—

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 17

Rev. 04, 2010-06-09

12 3 4 5 6 7...17

中文翻译

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