PTFA241301F

更新时间： 2024-11-20 09:58:43

品牌	Logo	应用领域
英飞凌 - INFINEON		射频
页数	文件大小	规格书
12页	241K
描述
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz

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中文翻译

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PTFA241301F 数据手册

PTFA241301E

PTFA241301F

Thermally-Enhanced High Power RF LDMOS FETs

130 W, 2420 – 2480 MHz

Description

The PTFA241301E and PTFA241301F are thermally-enhanced

130-watt, internally matched GOLDMOS FETs intended for ultra-

PTFA241301E

Package H-30260-2

linear applications. They are characterized for CDMA, CDMA2000,

Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to

2480 MHz. Full gold metallization ensures excellent device lifetime

and reliability.

PTFA241301F

Package H-31260-2

Features

Three-carrier CDMA2000 Performance

V_DD= 28 V, I_DQ= 1150 mA, ƒ = 2450 MHz

•

Thermally-enhanced packaging, Pb-free and

RoHS-compliant

•

Broadband internal matching

-40

-45

-50

-55

-60

-65

-70

-75

-80

Typical CDMA2000 performance at 2450 MHz

- Average output power = 25 W

- Linear Gain = 14 dB

ACP Up

ACP Low

- Efficiency = 25%

•

Typical CW performance, 2420 MHz, 28 V

- Output power at P–1dB = 140 W

- Efficiency = 50%

Efficiency

Integrated ESD protection: Human Body Model,

Class 2 (minimum)

ALT Up

•

Excellent thermal stability, low HCI drift

Capable of handling 10:1 VSWR @ 28 V, 130 W

(CW) output power

Output Power, Avg. (dBm)

RF Characteristics

Three-carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in

Infineon test fixture)

= 28 V, I

= 1150 mA, P

= 25 W average, ƒ = 2450 MHz

OUT

Characteristic

Gain

Symbol

Min

—

Typ

Max

—

Unit

Drain Efficiency

h_D

—

Adjacent Channel Power Ratio

ACPR

—

–50

—

dBc

All published data at T

= 25°C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 12

Rev. 05, 2007-05-11

12 3 4 5 6 7...12

中文翻译

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PTFA261301E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
PTFA261301EV1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic
PTFA261301F	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
PTFA261702E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz