生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.69 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PTFA220121MV4R1KXUMA1 | INFINEON |
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RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic | |
PTFA220121MV4R250 | INFINEON |
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RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic | |
PTFA220121MV4XUMA1 | INFINEON |
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RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic | |
PTFA240451E | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz | |
PTFA240451EV1 | INFINEON |
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RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic | |
PTFA240451F | INFINEON |
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RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic | |
PTFA241301E | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz | |
PTFA241301F | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz | |
PTFA241301FV1 | INFINEON |
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Thermally-Enhanced High Power RF LDMOS FETs 1 | |
PTFA260451E | INFINEON |
获取价格 |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz |