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PTFA261702E PDF预览

PTFA261702E

更新时间: 2024-11-20 09:58:43
品牌 Logo 应用领域
英飞凌 - INFINEON 射频
页数 文件大小 规格书
10页 365K
描述
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz

PTFA261702E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:GREEN, H-30275-4, 4 PIN
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.74
其他特性:HIGH RELIABILITY外壳连接:SOURCE
配置:COMMON SOURCE, 2 ELEMENTS最小漏源击穿电压:65 V
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:S BAND
JESD-30 代码:R-CDFM-F4JESD-609代码:e4
元件数量:2端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):643 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:GOLD
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

PTFA261702E 数据手册

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PTFA261702E  
Confidential, Limited Internal Distribution  
Thermally-Enhanced High Power RF LDMOS FETs  
170 W, 2500 – 2700 MHz  
Description  
The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX  
power amplifier applications in the 2500 to 2700 MHz band. Features  
include input and output matching, and thermally-enhanced package  
with slotted flange. Manufactured with Infineon's advanced LDMOS  
process, this device provides excellent thermal performance and  
superior reliability.  
PTFA261702E  
Package H-30275-4  
Features  
WiMAX Performance  
VDD = 28 V, IDQ = 1800 mA,  
Thermally-enhanced packages, Pb-free and  
(modulation = 64 QAM2/3, channel bandwidth = 3.5  
MHz, sample rate = 4 MHz)  
RoHS-compliant  
Broadband internal matching  
30  
25  
20  
15  
10  
5
-15  
-20  
-25  
-30  
-35  
-40  
-45  
Typical WiMAX performance at 2650 MHz, 28 V  
- Average output power = 32 W  
- Linear gain = 15 dB  
Efficiency  
EVM: ƒ = 2.62 GHz  
EVM: ƒ = 2.68 GHz  
EVM: ƒ = 2.65 GHz  
- Efficiency = 20%  
- Error vector magnitude = –29 dB  
Integrated ESD protection: Human Body Model,  
Class 2 (minimum)  
Excellent thermal stability, low HCI drift  
Capable of handling 10:1 VSWR @ 28 V,  
170 W (CW) output power  
0
20  
25  
30  
35  
40  
45  
50  
Output Power (dBm)  
RF Characteristics  
WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)  
= 28 V, I = 1800 mA, P = 32 W average  
V
DD  
DQ  
OUT  
ƒ = 2650 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz  
Characteristic  
Gain  
Symbol  
Min  
Typ  
15  
Max  
Unit  
dB  
%
G
ps  
Drain Efficiency  
Error Vector Magnitude  
hD  
20  
EVM  
–29  
dB  
All published data at T  
= 25°C unless otherwise indicated  
*See Infineon distributor for future availability.  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 10  
Rev. 01.1, 2009-02-20  

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