是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.7 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PTFA220081M | INFINEON |
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High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz | |
PTFA220081M-8W | INFINEON |
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RF Small Signal Field-Effect Transistor | |
PTFA220081MV4XUMA1 | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxid | |
PTFA220121M | INFINEON |
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High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz | |
PTFA220121M_15 | INFINEON |
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High Power RF LDMOS Field Effect Transistor 1 | |
PTFA220121MV4 | INFINEON |
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RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic | |
PTFA220121MV4R1K | INFINEON |
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RF Power Field-Effect Transistor, | |
PTFA220121MV4R1KV4XUMA1 | INFINEON |
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High Power RF LDMOS Field Effect Transistor 1 | |
PTFA220121MV4R1KXUMA1 | INFINEON |
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RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic | |
PTFA220121MV4R250 | INFINEON |
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RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic |