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PTFA220041MV4R1K PDF预览

PTFA220041MV4R1K

更新时间： 2024-11-23 21:15:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
18页 323K
描述
RF Power Field-Effect Transistor,

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中文翻译

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PTFA220041MV4R1K 技术参数

是否Rohs认证： 符合生命周期：Not Recommended
包装说明：,Reach Compliance Code：compliant
风险等级：5.7峰值回流温度（摄氏度）：NOT SPECIFIED
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

PTFA220041MV4R1K 数据手册

 浏览型号PTFA220041MV4R1K的Datasheet PDF文件第2页浏览型号PTFA220041MV4R1K的Datasheet PDF文件第3页浏览型号PTFA220041MV4R1K的Datasheet PDF文件第4页浏览型号PTFA220041MV4R1K的Datasheet PDF文件第5页浏览型号PTFA220041MV4R1K的Datasheet PDF文件第6页浏览型号PTFA220041MV4R1K的Datasheet PDF文件第7页 
PTFA220041M  
Confidential, Limited Internal Distribution  
High Power RF LDMOS Field Effect Transistor  
4 W, 28 V, 700 – 2200 MHz  
Description  
The PTFA220041M is an unmatched 4-watt LDMOS FET  
intended for power amplifier applications in the 700 MHz to 2200 MHz  
operating range. This LDMOS device offers excellent gain, efficiency  
and linearity performance in a small, overmolded plastic package.  
PTFA220041M  
Package PG-SON-10  
Two-tone Drive-up  
VDD = 28 V, IDQ = 50 mA,  
ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz  
Features  
•
•
•
•
Typical two-carrier WCDMA performance,  
1842 MHz, 8 dB PAR  
- P = 27 dBm Avg  
21  
20  
19  
18  
17  
60  
50  
40  
30  
20  
OUT  
- ACPR = –44 dBc  
Typical CW performance, 1842 MHz, 28 V  
- P  
= 37 dBm  
OUT  
- Efficiency = 53.5%  
- Gain = 17.9 dB  
Gain  
Typical CW performance, 940 MHz, 28 V  
- P  
= 37.5 dBm  
OUT  
- Efficiency = 57%  
- Gain = 19.7 dB  
Efficiency  
Capable of handling 10:1 VSWR @ 28 V, 5 W (CW)  
output power  
33  
34  
35  
36  
37  
38  
39  
•
•
•
Integrated ESD protection  
Excellent thermal stability  
Pb-free and RoHS compliant  
Output Power, PEP (dBm)  
RF Characteristics  
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture)  
V
= 28 V, I  
= 50 mA, P  
= 4 W PEP, ƒ = 1842 MHz, tone spacing = 1 MHz  
DD  
DQ  
OUT  
Characteristic  
Gain  
Symbol  
Min  
18.5  
35  
Typ  
19  
Max  
—
Unit  
dB  
G
ps  
Drain Efficiency  
ηD  
IMD  
IRL  
37.5  
–29  
–8  
—
%
Intermodulation Distortion  
Input Return Loss  
—
–28  
–7  
dBc  
dB  
—
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet – DRAFT ONLY 1 of 18  
Rev. 10.1, 2016-06-01  
1234567...18

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