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PTFA212001F PDF预览

PTFA212001F

更新时间： 2024-11-23 06:05:43
品牌 Logo 应用领域
英飞凌 - INFINEON 射频
页数 文件大小 规格书
11页 395K
描述
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz

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中文翻译

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PTFA212001F 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：FLANGE MOUNT, R-XDFM-F2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.8
其他特性：HIGH RELIABILITY外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：S BAND
JESD-30 代码：R-XDFM-F2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：200 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：625 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

PTFA212001F 数据手册

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PTFA212001E  
PTFA212001F  
Confidential, Limited Internal Distribution  
Thermally-Enhanced High Power RF LDMOS FETs  
200 W, 2110 – 2170 MHz  
Description  
The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs  
designed for single- and two-carrier WCDMA power amplifier  
applications in the 2110 to 2170 MHz band. Features include input  
and output matching, and thermally-enhanced packages with slotted  
or earless flanges. Manufactured with Infineon's advanced LDMOS  
process, these devices provide excellent thermal performance and  
superior reliability.  
PTFA212001E  
Package H-36260-2  
PTFA212001F  
Package H-37260-2  
Features  
2-Carrier WCDMA Drive-up  
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP  
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing  
•
Thermally-enhanced packages, Pb-free and  
RoHS compliant  
•
•
Broadband internal matching  
-23  
-28  
-33  
-38  
-43  
-48  
-53  
30  
25  
20  
15  
10  
5
Typical two-carrier WCDMA performance at  
2140 MHz, 30 V  
Efficiency  
- Average output power = 50 W  
- Linear Gain = 15.8 dB  
- Efficiency = 28%  
- Intermodulation distortion = –35.5 dBc  
- Adjacent channel power = –40 dBc  
IM3  
•
Typical single-carrier WCDMA performance at  
2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB  
- Average output power = 70 W  
- Linear Gain = 15.5 dB  
ACPR  
46  
- Efficiency = 34%  
- Adjacent channel power = –37 dBc  
0
34  
36  
38  
40  
42  
44  
48  
•
•
Typical CW performance, 2170 MHz, 30 V  
- Output power at P–1dB = 220 W  
- Efficiency = 54%  
Average Output Power (dBm)  
Integrated ESD protection: Human Body Model,  
Class 2 (minimum)  
•
•
Excellent thermal stability, low HCI drift  
Capable of handling 5:1 VSWR @ 30 V,  
200 W (CW) output power  
All published data at T  
= 25°C unless otherwise indicated  
*See Infineon distributor for future availability.  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 11  
Rev. 05.1, 2009-02-24  
1234567...11

中文翻译

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