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PSMN012-80PS,127 PDF预览

PSMN012-80PS,127

更新时间: 2024-09-28 15:48:27
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 216K
描述
PSMN012-80PS - N-channel 80 V 11 mΩ standard level MOSFET TO-220 3-Pin

PSMN012-80PS,127 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-220
针数:3Reach Compliance Code:not_compliant
风险等级:5.75Is Samacsys:N
Base Number Matches:1

PSMN012-80PS,127 数据手册

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PSMN012-80PS  
N-channel 80 V 11 mstandard level MOSFET  
Rev. 02 — 25 June 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is  
designed and qualified for use in a wide range of industrial, communications and domestic  
equipment.  
1.2 Features and benefits  
„ High efficiency due to low switching  
„ Suitable for standard level gate drive  
and conduction losses  
sources  
1.3 Applications  
„ DC-to-DC converters  
„ Load switching  
„ Motor control  
„ Server power supplies  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
drain-source voltage Tj 25 °C; Tj 175 °C  
Min  
Typ  
Max Unit  
VDS  
ID  
-
-
-
-
80  
74  
V
A
drain current  
Tmb = 25 °C; VGS = 10 V;  
see Figure 1  
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
-
-
-
148  
-
W
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 25 A;  
VDS = 40 V; see Figure 14;  
see Figure 15  
9.4  
nC  
Static characteristics  
RDSon  
drain-source  
on-state resistance  
VGS = 10 V; ID = 15 A;  
Tj = 25 °C;  
[1]  
-
9
11  
mΩ  
[1] Measured 3 mm from package.  
 
 
 
 
 
 

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