Datasheet > PSMN012-60YS,115

PSMN012-60YS,115

更新时间： 2024-01-24 15:22:20

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
15页	218K
描述
PSMN012-60YS - N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET SOIC 4-Pin

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

PSMN012-60YS,115 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOIC
针数：	4	Reach Compliance Code：	not_compliant
风险等级：	8.56	Base Number Matches：	1

PSMN012-60YS,115 数据手册

PSMN012-60YS

N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET

Rev. 01 — 5 January 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

Advanced TrenchMOS provides low

Improved mechanical and thermal

RDSon and low gate charge

characteristics

High efficiency gains in switching

LFPAK provides maximum power

power converters

density in a Power SO8 package

1.3 Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

T_j

junction temperature

-55

175

°C

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

V_GS= 10 V; T_j(init)= 25 °C;

I_D= 59 A; V_sup≤ 60 V;

R_GS= 50 Ω

avalanche energy

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 30 A;

V_DS= 30 V; see Figure 14 and 15

6.4

Q_G(tot)

28.4

12 3 4 5 6 7...15

中文翻译

下载PDF

PSMN012-60YS,115 替代型号

型号	品牌	替代类型	描述	数据表
HAT2266H-EL-E	RENESAS	功能相似	Silicon N Channel Power MOS FET Power Switching

与PSMN012-60YS,115相关器件

型号	品牌	获取价格	描述	数据表
PSMN012-80BS	NEXPERIA	获取价格	N-channel 80 V 11 mΩ standard level MOSFET in
PSMN012-80PS	NXP	获取价格	N-channel 80 V 11 mΩ standard level MOSFET
PSMN012-80PS	NEXPERIA	获取价格	N-channel 80 V 11 mΩ standard level MOSFETPro
PSMN012-80PS,127	NXP	获取价格	PSMN012-80PS - N-channel 80 V 11 mΩ standard
PSMN013-100BS	NXP	获取价格	N-channel 100V 13.9mΩ standard level MOSFET i
PSMN013-100BS	NEXPERIA	获取价格	N-channel 100V 13.9mΩ standard level MOSFET i
PSMN013-100BS,118	NXP	获取价格	PSMN013-100BS - N-channel 100V 13.9mΩ standar
PSMN013-100ES	NXP	获取价格	N-channel 100 V 13.9 mΩ standard level MOSFET
PSMN013-100ES,127	NXP	获取价格	PSMN013-100ES - N-channel 100V 13.9mΩ standar
PSMN013-100PS	NXP	获取价格	N-channel 100V 13.9mΩ standard level MOSFET i