Datasheet > PSMN012-60MS

PSMN012-60MS

更新时间： 2023-09-03 20:30:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	293K
描述
N-channel 60 V 12 mOhm standard level MOSFET in LFPAK33Production

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中文翻译

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技术参数
数据手册

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PSMN012-60MS 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.72
JESD-609代码：	e3	湿度敏感等级：	1
端子面层：	Tin (Sn)	Base Number Matches：	1

PSMN012-60MS 数据手册

PSMN012-60MS

N-channel 60 V 12 mΩ standard level MOSFET in LFPAK33

19 December 2019

Product data sheet

1. General description

Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is

designed and qualified for use in a wide range of motor, industrial, communications and domestic

equipment.

2. Features and benefits

•

High efficiency due to low switching and conduction losses

•

Suitable for standard level gate drive sources

LFPAK33 package is footprint compatible with other 3.3 mm footprint types

Qualified to 175 °C

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

Fig. 11

mΩ

Q_GD

gate-drain charge

total gate charge

I_D= 15 A; V_DS= 48 V; V_GS= 10 V;

T_j= 25 °C; Fig. 13; Fig. 14

8.5

Q_G(tot)

24.8

5. Pinning information

Table 2. Pinning information

Symbol

Description

Source

Gate

Simplified outline

Graphic symbol

mbb076

Mounting base; connected

to drain

LFPAK33 (SOT1210)

12 3 4 5 6 7...12

中文翻译

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