是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.73 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 5.4 A | 最大漏极电流 (ID): | 5.4 A |
最大漏源导通电阻: | 0.042 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2 W |
认证状态: | Not Qualified | 参考标准: | IEC-60134 |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
PMV45EN2 | NEXPERIA |
类似代替 |
30 V, N-channel Trench MOSFETProduction | |
PMV56XN,215 | NXP |
功能相似 |
PMV56XN - N-channel TrenchMOS extremely low level FET TO-236 3-Pin | |
IRLML0030TRPBF | INFINEON |
功能相似 |
HEXFET Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PMV45EN,215 | NXP |
获取价格 |
PMV45EN - N-channel TrenchMOS logic level FET TO-236 3-Pin | |
PMV45EN2 | NXP |
获取价格 |
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal | |
PMV45EN2 | NEXPERIA |
获取价格 |
30 V, N-channel Trench MOSFETProduction | |
PMV48XP | TYSEMI |
获取价格 |
20 V, 3.5 A P-channel Trench MOSFET Logic-level compatible Very fast switching | |
PMV48XP | NEXPERIA |
获取价格 |
20 V, 3.5 A P-channel Trench MOSFETProduction | |
PMV48XP | NXP |
获取价格 |
20 v, 3.5A P-channel Trench MOSFET | |
PMV48XP,215 | NXP |
获取价格 |
PMV48XP - 20 V, 3.5 A P-channel Trench MOSFET TO-236 3-Pin | |
PMV48XPA | NXP |
获取价格 |
SMALL SIGNAL, FET | |
PMV48XPA | NEXPERIA |
获取价格 |
20 V, P-channel Trench MOSFETProduction | |
PMV48XPA2 | NEXPERIA |
获取价格 |
20 V, P-channel Trench MOSFETProduction |