Datasheet > PMEG2010BELD-Q

PMEG2010BELD-Q

更新时间： 2024-10-01 11:13:03

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	239K
描述
20 V, 1 A low VF MEGA Schottky barrier rectifierProduction

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PMEG2010BELD-Q 数据手册

PMEG2010BELD-Q

20 V, 1 A low VF MEGA Schottky barrier rectifier

18 May 2021

Product data sheet

1. General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated

guard ring for stress protection, encapsulated in a leadless ultra small DFN1006D-2 (SOD882D)

Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

2. Features and benefits

•

Average forward current: I_F(AV)≤ 1 A

•

Reverse voltage: V_R≤ 20 V

Low forward voltage V_F≤ 490 mV

Qualified according to AEC-Q101 and recommended for use in automotive applications

Ultra small and leadless SMD plastic package

Solderable side pads

Package height typ. 0.37 mm

3. Applications

•

Low voltage rectification

High efficiency DC-to-DC conversion

Switch mode power supply

Reverse polarity protection

Low power consumption applications

Ultra high-speed switching

LED backlight for mobile application

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F(AV)

average forward

current

δ = 0.5; f = 20 kHz; square wave; T_sp

130 °C

≤

δ = 0.5; f = 20 kHz; square wave; T_amb≤ [1]

80 °C

V_R

V_F

reverse voltage

forward voltage

T_j= 25 °C

I_F= 1 A; t_p≤ 300 µs; δ ≤ 0.02; pulsed;

T_j= 25 °C

428

490

I_R

t_rr

reverse current

V_R= 10 V; T_j= 25 °C

µA

reverse recovery time I_F= 0.5 A; I_R= 0.5 A; I_R(meas)= 0.1 A;

T_j= 25 °C

1.6

[1] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

12 3 4 5 6 7...12

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