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PMEG2010BER,115 PDF预览

PMEG2010BER,115

更新时间: 2024-11-21 20:10:11
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管
页数 文件大小 规格书
13页 81K
描述
PMEG2010BER - 1 A low Vf MEGA Schottky barrier rectifier SOD-123 2-Pin

PMEG2010BER,115 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOD-123
针数:2Reach Compliance Code:not_compliant
风险等级:5.72Base Number Matches:1

PMEG2010BER,115 数据手册

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PMEG2010BER  
1 A low VF MEGA Schottky barrier rectifier  
Rev. 01 — 16 April 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an  
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat  
lead Surface-Mounted Device (SMD) plastic package.  
1.2 Features  
I Average forward current: IF(AV) 1 A  
I Reverse voltage: VR 20 V  
I Low forward voltage  
I High power capability due to clip-bond technology  
I AEC-Q101 qualified  
I Small and flat lead SMD plastic package  
1.3 Applications  
I Low voltage rectification  
I High efficiency DC-to-DC conversion  
I Switch Mode Power Supply (SMPS)  
I Reverse polarity protection  
I Low power consumption applications  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tj = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
IF(AV)  
average forward current  
square wave;  
δ = 0.5;  
f = 20 kHz  
[1]  
T
T
amb 125 °C  
sp 140 °C  
-
-
-
-
-
-
1
A
-
1
A
VR  
VF  
IR  
reverse voltage  
forward voltage  
reverse current  
-
20  
450  
50  
V
IF = 1 A  
395  
8
mV  
µA  
VR = 20 V  
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.  
 
 
 
 
 
 

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