5秒后页面跳转
PESD5V0V1BLD PDF预览

PESD5V0V1BLD

更新时间: 2024-11-21 11:14:31
品牌 Logo 应用领域
安世 - NEXPERIA 局域网光电二极管
页数 文件大小 规格书
12页 255K
描述
Very low capacitance bidirectional ESD protection diodeProduction

PESD5V0V1BLD 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PDSO-N2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.71Is Samacsys:N
最大击穿电压:7.8 V最小击穿电压:5.8 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-N2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:45 W元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:BIDIRECTIONAL
最大重复峰值反向电压:5 V表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:DUAL
Base Number Matches:1

PESD5V0V1BLD 数据手册

 浏览型号PESD5V0V1BLD的Datasheet PDF文件第2页浏览型号PESD5V0V1BLD的Datasheet PDF文件第3页浏览型号PESD5V0V1BLD的Datasheet PDF文件第4页浏览型号PESD5V0V1BLD的Datasheet PDF文件第5页浏览型号PESD5V0V1BLD的Datasheet PDF文件第6页浏览型号PESD5V0V1BLD的Datasheet PDF文件第7页 
PESD5V0V1BLD  
Very low capacitance bidirectional ESD protection diode  
1 April 2023  
Product data sheet  
1. General description  
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to  
protect one signal line from the damage caused by ESD and other transients. The device is housed  
in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and  
solderable side pads.  
2. Features and benefits  
Bidirectional ESD protection of one line  
Ultra small SMD plastic package  
Solderable side pads  
Package height typ. 0.37 mm  
Very low diode capacitance: Cd = 11 pF  
Max. peak pulse power: PPPM = 45 W  
Low clamping voltage: VCL = 12.5 V  
Ultra low leakage current: IRM = 1 nA  
ESD protection up to 30 kV  
IEC 61000-4-2; level 4 (ESD)  
IEC 61000-4-5 (surge); IPPM = 4.8 A  
3. Applications  
Computers and peripherals  
Audio and video equipment  
Cellular handsets and accessories  
SIM card protection  
Communication systems  
Portable electronics  
10/100 Mbit/s Ethernet  
FireWire  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
-
-
5
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C  
-
11  
13  
pF  
 
 
 
 

PESD5V0V1BLD 替代型号

型号 品牌 替代类型 描述 数据表
PESD5V0V1BLD,315 NXP

类似代替

PESD5V0V1BLD - Very low capacitance bidirectional ESD protection diode DFN 2-Pin

与PESD5V0V1BLD相关器件

型号 品牌 获取价格 描述 数据表
PESD5V0V1BLD,315 NXP

获取价格

PESD5V0V1BLD - Very low capacitance bidirectional ESD protection diode DFN 2-Pin
PESD5V0V1BLD-Q NEXPERIA

获取价格

Very low capacitance bidirectional ESD protection diodeProduction
PESD5V0V1BL-Q NEXPERIA

获取价格

Very low capacitance bidirectional ESD protection diodeProduction
PESD5V0V1BLS NEXPERIA

获取价格

Very low capacitance bidirectional ESD protection diodeProduction
PESD5V0V1BSF NXP

获取价格

Ultra low profile bidirectional very low capacitance ESD protection diode
PESD5V0V1BSF NEXPERIA

获取价格

Ultra low profile bidirectional very low capacitance ESD protection diodeProduction
PESD5V0V1BSF,315 NXP

获取价格

PESD5V0V1BSF - Ultra low profile bidirectional very low capacitance ESD protection diode
PESD5V0V1BSF_11 NXP

获取价格

Ultra low profile bidirectional very low capacitance ESD protection diode
PESD5V0V1BSF-315 NXP

获取价格

DIODE 8 W, BIDIRECTIONAL, SILICON, TVS DIODE, 0.60 X 0.30 MM, 0.30 MM HEIGHT, HALOGEN FREE
PESD5V0V1USF,315 NXP

获取价格

PESD5V0V1USF - Very low capacitance unidirectional ESD protection diode