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PESD5V0V4UW

更新时间: 2024-11-17 22:16:39
品牌 Logo 应用领域
恩智浦 - NXP 瞬态抑制器二极管
页数 文件大小 规格书
11页 72K
描述
Very low capacitance quadruple ESD protection diode arrays in SOT665 package

PESD5V0V4UW 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:ULTRA SMALL, PLASTIC, SMD, 5 PIN
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.53Is Samacsys:N
最大击穿电压:7.2 V最小击穿电压:6.4 V
击穿电压标称值:6.8 V最大钳位电压:13 V
配置:COMMON ANODE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-F5
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:16 W元件数量:4
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:5 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

PESD5V0V4UW 数据手册

 浏览型号PESD5V0V4UW的Datasheet PDF文件第2页浏览型号PESD5V0V4UW的Datasheet PDF文件第3页浏览型号PESD5V0V4UW的Datasheet PDF文件第4页浏览型号PESD5V0V4UW的Datasheet PDF文件第5页浏览型号PESD5V0V4UW的Datasheet PDF文件第6页浏览型号PESD5V0V4UW的Datasheet PDF文件第7页 
PESDxV4UW series  
Very low capacitance quadruple ESD protection diode arrays  
in SOT665 package  
Rev. 01 — 22 April 2005  
Product data sheet  
1. Product profile  
1.1 General description  
Very low capacitance quadruple ElectroStatic Discharge (ESD) protection diode arrays in  
ultra small SOT665 plastic package designed to protect up to four signal lines from the  
damage caused by ESD and other transients.  
1.2 Features  
ESD protection of up to four lines  
Very low diode capacitance  
Low clamping voltage  
Ultra low leakage current: IRM = 3 nA  
ESD protection up to 12 kV  
IEC 61000-4-2; level 4 (ESD)  
1.3 Applications  
Computers and peripherals  
Audio and video equipment  
Cellular handsets and accessories  
Communication systems  
Portable electronics  
Subscriber Identity Module (SIM) card  
protection  
1.4 Quick reference data  
Table 1:  
Symbol  
VRWM  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
reverse stand-off voltage  
PESD3V3V4UW  
PESD5V0V4UW  
diode capacitance  
-
-
-
-
3.3  
5.0  
V
V
Cd  
f = 1 MHz;  
see Figure 5;  
VR = 0 V  
PESD3V3V4UW  
PESD5V0V4UW  
-
-
15  
12  
18  
15  
pF  
pF  

PESD5V0V4UW 替代型号

型号 品牌 替代类型 描述 数据表
PESD5V0V4UW,115 NXP

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