Datasheet > PESD5V0X1BT-Q

PESD5V0X1BT-Q

更新时间： 2024-09-13 11:10:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	218K
描述
Ultra low capacitance bidirectional ESD protection diodeProduction

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PESD5V0X1BT-Q 数据手册

PESD5V0X1BT-Q

Ultra low capacitance bidirectional ESD protection diode

29 August 2022

Product data sheet

1. General description

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a small

SOT23 Surface-Mounted Device (SMD) plastic package, designed to protect one signal line from

the damage caused by ESD and other transients.

The device may also be used for unidirectional ESD protection of up to two signal lines.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Unidirectional ESD protection of up to two lines

Ultra low diode capacitance: C_d= 0.9 pF

Very low leakage current: I_RM= 1 nA

ESD protection up to 9 kV

IEC 61000-4-2; level 4 (ESD)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

USB interfaces

Antenna protection

Radio Frequency (RF) protection

10/100/1000 Mbit/s Ethernet

FireWire

Asymmetric Digital Subscriber Line (ADSL)

High-speed data lines

Subscriber Identity Module (SIM) card protection

Computers, peripherals and printers

Cellular handsets and accessories

Portable electronics

Communication systems

Audio and video equipment

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

[1]

[2]

0.9

1.3

2.6

[1] Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1.

[2] Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.

12 3 4 5 6 7...12

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