Datasheet > PESD5V0X1BL_09

PESD5V0X1BL_09

更新时间： 2024-11-14 06:00:15

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
11页	70K
描述
Ultra low capacitance bidirectional ESD protection diode

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PESD5V0X1BL_09 数据手册

PESD5V0X1BL

Ultra low capacitance bidirectional ESD protection diode

Rev. 02 — 16 July 2009

Product data sheet

1. Product proﬁle

1.1 General description

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a

SOD882 leadless ultra small Surface-Mounted Device (SMD) plastic package designed

to protect one signal line from the damage caused by ESD and other transients.

1.2 Features

I Bidirectional ESD protection of one line I ESD protection up to 9 kV

I Ultra low diode capacitance: C_d= 0.9 pF I IEC 61000-4-2; level 4 (ESD)

I Very low leakage current: I_RM= 1 nA

I AEC-Q101 qualiﬁed

1.3 Applications

I USB interfaces

I Cellular handsets and accessories

I Portable electronics

I Antenna protection

I 10/100/1000 Mbit/s Ethernet

I FireWire

I Communication systems

I Computers and peripherals

I Audio and video equipment

I High-speed data lines

I Subscriber Identity Module (SIM) card

protection

1.4 Quick reference data

Table 1.

Quick reference data

T_amb= 25 °C unless otherwise speciﬁed.

Symbol Parameter

Per diode

Conditions

Min

Typ

Max

Unit

V_RWM

C_d

reverse standoff voltage

diode capacitance

f = 1 MHz; V_R= 0 V

0.9

1.3

12 3 4 5 6 7...11

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