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PESD5V0X1BT

更新时间: 2024-11-15 11:10:39
品牌 Logo 应用领域
安世 - NEXPERIA 局域网PC光电二极管
页数 文件大小 规格书
12页 215K
描述
Ultra low capacitance bidirectional ESD protection diodeProduction

PESD5V0X1BT 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.64Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:944397
Samacsys Pin Count:3Samacsys Part Category:Diode
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT-23
Samacsys Released Date:2017-11-16 02:48:44Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

PESD5V0X1BT 数据手册

 浏览型号PESD5V0X1BT的Datasheet PDF文件第2页浏览型号PESD5V0X1BT的Datasheet PDF文件第3页浏览型号PESD5V0X1BT的Datasheet PDF文件第4页浏览型号PESD5V0X1BT的Datasheet PDF文件第5页浏览型号PESD5V0X1BT的Datasheet PDF文件第6页浏览型号PESD5V0X1BT的Datasheet PDF文件第7页 
PESD5V0X1BT  
Ultra low capacitance bidirectional ESD protection diode  
1 April 2023  
Product data sheet  
1. General description  
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a small  
SOT23 Surface-Mounted Device (SMD) plastic package, designed to protect one signal line from  
the damage caused by ESD and other transients.  
The device may also be used for unidirectional ESD protection of up to two signal lines.  
2. Features and benefits  
Bidirectional ESD protection of one line  
Unidirectional ESD protection of up to two lines  
Ultra low diode capacitance: Cd = 0.9 pF  
Very low leakage current: IRM = 1 nA  
ESD protection up to 9 kV  
IEC 61000-4-2; level 4 (ESD)  
3. Applications  
USB interfaces  
Antenna protection  
Radio Frequency (RF) protection  
10/100/1000 Mbit/s Ethernet  
FireWire  
Asymmetric Digital Subscriber Line (ADSL)  
High-speed data lines  
Subscriber Identity Module (SIM) card protection  
Computers, peripherals and printers  
Cellular handsets and accessories  
Portable electronics  
Communication systems  
Audio and video equipment  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
-
-
5
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C  
[1]  
[2]  
-
-
0.9  
2
1.3  
2.6  
pF  
pF  
[1] Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1.  
[2] Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.  
 
 
 
 
 

PESD5V0X1BT 替代型号

型号 品牌 替代类型 描述 数据表
PESD5V0X1BT,215 NXP

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