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PESD5V0X1BCAL

更新时间: 2024-02-26 22:33:08
品牌 Logo 应用领域
恩智浦 - NXP 二极管
页数 文件大小 规格书
12页 426K
描述
Extremely low capacitance bidirectional ESD protection diode

PESD5V0X1BCAL 数据手册

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PESD5V0X1BCAL  
Extremely low capacitance bidirectional ESD protection diode  
Rev. 1 — 1 February 2012  
Product data sheet  
1. Product profile  
1.1 General description  
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in  
a leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed  
to protect one signal line from the damage caused by ESD and other transients. The  
combination of extremely low capacitance, high ESD maximum rating and ultra small  
package makes the device ideal for high-speed data line protection.  
1.2 Features and benefits  
Bidirectional ESD protection of one line ESD protection up to 15 kV  
Extremely low capacitance:  
IEC 61000-4-2; level 4 (ESD)  
Cd = 0.85 pF  
Low clamping voltage: VCL = 17 V  
Ultra low leakage current: IRM = 1 nA  
AEC-Q101 qualified  
1.3 Applications  
Computers and peripherals  
Audio and video equipment  
Cellular handsets and accessories  
10/100/1000 Mbit/s Ethernet  
Communication systems  
Portable electronics  
SIM card protection  
USB, High-Definition Multimedia  
Interface (HDMI), FireWire  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Per device  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
Cd  
reverse standoff voltage  
diode capacitance  
-
-
-
5.5  
V
f = 1 MHz; VR = 0 V  
0.85  
0.95  
pF  

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