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PESD5V0X1BCL_15 PDF预览

PESD5V0X1BCL_15

更新时间: 2024-11-19 01:18:55
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
12页 400K
描述
Extremely low capacitance bidirectional ESD protection diode

PESD5V0X1BCL_15 数据手册

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PESD5V0X1BCL  
Extremely low capacitance bidirectional ESD protection diode  
Rev. 1 — 12 March 2012  
Product data sheet  
1. Product profile  
1.1 General description  
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in  
a leadless ultra small SOD882 (DFN1006-2) Surface-Mounted Device (SMD) plastic  
package designed to protect one signal line from the damage caused by ESD and other  
transients. The combination of extremely low capacitance, high ESD maximum rating and  
ultra small package makes the device ideal for high-speed data line protection.  
1.2 Features and benefits  
Bidirectional ESD protection of one line ESD protection up to 8 kV  
Extremely low capacitance:  
IEC 61000-4-2; level 4 (ESD)  
Cd = 0.49 pF  
Low clamping voltage: VCL = 18 V  
Ultra low leakage current: IRM = 1 nA  
AEC-Q101 qualified  
1.3 Applications  
Computers and peripherals  
Audio and video equipment  
Cellular handsets and accessories  
10/100/1000 Mbit/s Ethernet  
Portable electronics  
SIM card protection  
High-speed data lines  
Communication systems  
USB, High-Definition Multimedia  
Interface (HDMI), FireWire  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Per device  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
Cd  
reverse standoff voltage  
diode capacitance  
-
-
-
5.5  
V
f = 1 MHz; VR = 0 V  
0.49  
0.60  
pF  

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