Datasheet > PESD5V0X1BCAL,315

PESD5V0X1BCAL,315

更新时间： 2024-02-27 01:30:20

品牌	Logo	应用领域
恩智浦 - NXP		局域网二极管
页数	文件大小	规格书
12页	423K
描述
PESD5V0X1BCAL - Extremely low capacitance bidirectional ESD protection diode DFN 2-Pin

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技术参数
数据手册

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PESD5V0X1BCAL,315 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DFN
针数：	2	Reach Compliance Code：	compliant
风险等级：	8.59	Base Number Matches：	1

PESD5V0X1BCAL,315 数据手册

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PESD5V0X1BCAL

Extremely low capacitance bidirectional ESD protection diode

Rev. 1 — 1 February 2012

Product data sheet

1. Product profile

1.1 General description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in

a leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed

to protect one signal line from the damage caused by ESD and other transients. The

combination of extremely low capacitance, high ESD maximum rating and ultra small

package makes the device ideal for high-speed data line protection.

1.2 Features and benefits

 Bidirectional ESD protection of one line  ESD protection up to 15 kV

 Extremely low capacitance:

 IEC 61000-4-2; level 4 (ESD)

C_d= 0.85 pF

 Low clamping voltage: V_CL= 17 V

 Ultra low leakage current: I_RM= 1 nA

 AEC-Q101 qualified

1.3 Applications

 Computers and peripherals

 Audio and video equipment

 Cellular handsets and accessories

 10/100/1000 Mbit/s Ethernet

 Communication systems

 Portable electronics

 SIM card protection

 USB, High-Definition Multimedia

Interface (HDMI), FireWire

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Per device

Conditions

Min

Typ

Max

Unit

V_RWM

C_d

reverse standoff voltage

diode capacitance

5.5

f = 1 MHz; V_R= 0 V

0.85

0.95

12 3 4 5 6 7...12

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