Datasheet > PESD5V0V1BLS

PESD5V0V1BLS

更新时间： 2024-11-19 11:14:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	223K
描述
Very low capacitance bidirectional ESD protection diodeProduction

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PESD5V0V1BLS 数据手册

PESD5V0V1BLS

Very low capacitance bidirectional ESD protection diode

3 February 2021

Product data sheet

1. General description

Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to

protect one signal line from the damage caused by ESD and other transients. The device is housed

in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic

package with side-wettable flanks (SWF).

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Ultra small SMD plastic package

Side wettable flanks

Very low diode capacitance: C_d= 11 pF

Low clamping voltage: V_CL= 12.5 V

Ultra low leakage current: I_RMtyp. < 1 nA

ESD protection up to 30 kV

IEC 61000-4-2; level 4 (ESD)

IEC 61000-4-5 (surge); I_PPM= 4.8 A

AEC-Q101 qualified

3. Applications

•

Computers and peripherals

Audio and video equipment

Cellular handsets and accessories

SIM card protection

Communication systems

Portable electronics

4. Quick reference data

Table 1. Quick reference data

Symbol

C_d

Parameter

Conditions

Min

Typ

Max

Unit

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

T_amb= 25 °C

V_RWM

reverse standoff

voltage

12 3 4 5 6 7...11

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