Datasheet > PESD5V0V1BSF_11

PESD5V0V1BSF_11

更新时间： 2024-02-16 00:24:54

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
13页	197K
描述
Ultra low profile bidirectional very low capacitance ESD protection diode

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PESD5V0V1BSF_11 数据手册

PESD5V0V1BSF

Ultra low profile bidirectional very low capacitance

ESD protection diode

Rev. 2 — 17 February 2011

Product data sheet

1. Product profile

1.1 General description

Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in

a SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to

protect one signal line from the damage caused by ESD and other transients.

1.2 Features and benefits

Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen

and antimony (Dark Green compliant)

Bidirectional ESD protection of one line

Very low diode capacitance C_d= 3.5 pF

ESD protection up to ±15 kV according to IEC 61000-4-2

Ultra small SMD package

Symmetrical breakdown voltage

1.3 Applications

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

1.4 Quick reference data

Table 1.

Quick reference data

T_amb= 25 °C unless otherwise specified.

Symbol Parameter Conditions

Min

−5

Typ

Max

Unit

V_RWM

C_d

reverse standoff voltage

diode capacitance

[1]

f = 1 MHz; V_R= 0 V

2.5

3.5

4.5

[1] This parameter is guaranteed by design.

12 3 4 5 6 7...13

中文翻译

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