是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | R-XBCC-N2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.64 | 最大击穿电压: | 10 V |
最小击穿电压: | 6 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | R-XBCC-N2 | 最大非重复峰值反向功率耗散: | 8 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 参考标准: | IEC-60134; IEC-61000-4-2; IEC-61000-4-5 |
最大重复峰值反向电压: | 5 V | 表面贴装: | YES |
技术: | AVALANCHE | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
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