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PESD5V0V1BSF

更新时间: 2024-11-19 11:14:11
品牌 Logo 应用领域
安世 - NEXPERIA 局域网二极管
页数 文件大小 规格书
13页 792K
描述
Ultra low profile bidirectional very low capacitance ESD protection diodeProduction

PESD5V0V1BSF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-XBCC-N2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.64最大击穿电压:10 V
最小击穿电压:6 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-XBCC-N2最大非重复峰值反向功率耗散:8 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL参考标准:IEC-60134; IEC-61000-4-2; IEC-61000-4-5
最大重复峰值反向电压:5 V表面贴装:YES
技术:AVALANCHE端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

PESD5V0V1BSF 数据手册

 浏览型号PESD5V0V1BSF的Datasheet PDF文件第2页浏览型号PESD5V0V1BSF的Datasheet PDF文件第3页浏览型号PESD5V0V1BSF的Datasheet PDF文件第4页浏览型号PESD5V0V1BSF的Datasheet PDF文件第5页浏览型号PESD5V0V1BSF的Datasheet PDF文件第6页浏览型号PESD5V0V1BSF的Datasheet PDF文件第7页 
PESD5V0V1BSF  
Ultra low profile bidirectional very low capacitance  
ESD protection diode  
Rev. 2 — 17 February 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in  
a SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to  
protect one signal line from the damage caused by ESD and other transients.  
1.2 Features and benefits  
„ Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen  
and antimony (Dark Green compliant)  
„ Bidirectional ESD protection of one line  
„ Very low diode capacitance Cd = 3.5 pF  
„ ESD protection up to ±15 kV according to IEC 61000-4-2  
„ Ultra small SMD package  
„ Symmetrical breakdown voltage  
1.3 Applications  
„ Cellular handsets and accessories  
„ Portable electronics  
„ Communication systems  
„ Computers and peripherals  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
5  
Typ  
-
Max  
5
Unit  
V
VRWM  
Cd  
reverse standoff voltage  
diode capacitance  
[1]  
f = 1 MHz; VR = 0 V  
2.5  
3.5  
4.5  
pF  
[1] This parameter is guaranteed by design.  

PESD5V0V1BSF 替代型号

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PESD5V0V1BSF,315 NXP

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