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PESD5V0V1BLD,315 PDF预览

PESD5V0V1BLD,315

更新时间: 2024-11-20 19:41:23
品牌 Logo 应用领域
恩智浦 - NXP 局域网光电二极管
页数 文件大小 规格书
14页 152K
描述
PESD5V0V1BLD - Very low capacitance bidirectional ESD protection diode DFN 2-Pin

PESD5V0V1BLD,315 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFN包装说明:1 X 1.60 MM, 0.40 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.55最大击穿电压:7.8 V
最小击穿电压:5.8 V击穿电压标称值:6.8 V
最大钳位电压:12.5 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-N2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:45 W
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:BIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:5 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:DUALBase Number Matches:1

PESD5V0V1BLD,315 数据手册

 浏览型号PESD5V0V1BLD,315的Datasheet PDF文件第2页浏览型号PESD5V0V1BLD,315的Datasheet PDF文件第3页浏览型号PESD5V0V1BLD,315的Datasheet PDF文件第4页浏览型号PESD5V0V1BLD,315的Datasheet PDF文件第5页浏览型号PESD5V0V1BLD,315的Datasheet PDF文件第6页浏览型号PESD5V0V1BLD,315的Datasheet PDF文件第7页 
PESD5V0V1BLD  
Very low capacitance bidirectional ESD protection diode  
Rev. 1 — 7 December 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode  
designed to protect one signal line from the damage caused by ESD and other transients.  
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)  
plastic package with visible and solderable side pads.  
1.2 Features and benefits  
„ Bidirectional ESD protection of one line „ Low clamping voltage: VCL = 12.5 V  
„ Ultra small SMD plastic package  
„ Solderable side pads  
„ Ultra low leakage current: IRM < 1 nA  
„ ESD protection up to 30 kV  
„ Package height typ. 0.37 mm  
„ IEC 61000-4-2; level 4 (ESD)  
„ Very low diode capacitance: Cd = 11 pF „ IEC 61000-4-5 (surge); IPP = 4.8 A  
„ Max. peak pulse power: PPP = 45 W  
„ AEC-Q101 qualified  
1.3 Applications  
„ Computers and peripherals  
„ Audio and video equipment  
„ Cellular handsets and accessories  
„ Communication systems  
„ Portable electronics  
„ 10/100 Mbit/s Ethernet  
„ Subscriber Identity Module (SIM) card „ FireWire  
protection  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
Typ  
-
Max  
5
Unit  
V
VRWM  
Cd  
reverse standoff voltage  
diode capacitance  
-
-
f = 1 MHz; VR = 0 V  
11  
13  
pF  
 
 
 
 
 

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