Datasheet > PESD5V0V1BLD-Q

PESD5V0V1BLD-Q

更新时间： 2024-11-19 11:13:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	258K
描述
Very low capacitance bidirectional ESD protection diodeProduction

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PESD5V0V1BLD-Q 数据手册

PESD5V0V1BLD-Q

Very low capacitance bidirectional ESD protection diode

31 May 2022

Product data sheet

1. General description

Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to

protect one signal line from the damage caused by ESD and other transients. The device is housed

in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and

solderable side pads.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Ultra small SMD plastic package

Solderable side pads

Package height typ. 0.37 mm

Very low diode capacitance: C_d= 11 pF

Max. peak pulse power: P_PPM= 45 W

Low clamping voltage: V_CL= 12.5 V

Ultra low leakage current: I_RM= 1 nA

ESD protection up to 30 kV

IEC 61000-4-2; level 4 (ESD)

IEC 61000-4-5 (surge); I_PPM= 4.8 A

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Computers and peripherals

Audio and video equipment

Cellular handsets and accessories

SIM card protection

Communication systems

Portable electronics

10/100 Mbit/s Ethernet

FireWire

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

12 3 4 5 6 7...12

中文翻译

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