Datasheet > PESD3V3R1BSF

PESD3V3R1BSF

更新时间： 2024-11-15 11:15:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	147K
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PESD3V3R1BSF 数据手册

PESD3V3R1BSF

Extremely low capacitance bidirectional ESD protection

diode

12 March 2021

Short data sheet

1. General description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the

TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small

Surface-Mounted Device (SMD) package designed to protect one signal line from the damage

caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Extremely low diode capacitance C_d= 0.155 pF at 0 V

Extremely low insertion loss α_IL= -0.27 dB at 10 GHz

Extremely low return loss α_RL= -14.3 dB at 10 GHz

Extremely low clamping voltage to protect sensitive I/Os

Extremely low inductance protection path to ground

Extremely low leakage 1 nA typical at 3.3 V

Ultra small SMD package

3. Applications

•

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

Thunderbolt and USB4 data lines

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

-3.3

3.3

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.155 0.186 pF

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode

Simplified outline

Graphic symbol

cathode

sym045

Transparent

top view

DSN0603-2 (SOD962-2)

12 3 4 5 6 7

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