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PESD3V3S4UF

更新时间: 2024-09-20 06:00:15
品牌 Logo 应用领域
恩智浦 - NXP 二极管局域网
页数 文件大小 规格书
13页 84K
描述
Unidirectional quadruple ESD protection diode arrays

PESD3V3S4UF 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否无铅: 不含铅
是否Rohs认证: 符合生命周期:Transferred
包装说明:1 X 1.45 MM, 0.50 MM HEIGHT, PLASTIC, SMD, 6 PIN针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.53
最大击穿电压:5.88 V最小击穿电压:5.32 V
击穿电压标称值:5.6 V最大钳位电压:11 V
配置:COMMON ANODE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PBCC-N6
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:110 W元件数量:4
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:3.3 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:30Base Number Matches:1

PESD3V3S4UF 数据手册

 浏览型号PESD3V3S4UF的Datasheet PDF文件第2页浏览型号PESD3V3S4UF的Datasheet PDF文件第3页浏览型号PESD3V3S4UF的Datasheet PDF文件第4页浏览型号PESD3V3S4UF的Datasheet PDF文件第5页浏览型号PESD3V3S4UF的Datasheet PDF文件第6页浏览型号PESD3V3S4UF的Datasheet PDF文件第7页 
PESD3V3S4UF; PESD5V0S4UF  
Unidirectional quadruple ESD protection diode arrays  
Rev. 01 — 17 January 2008  
Product data sheet  
1. Product profile  
1.1 General description  
Unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a small  
SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four  
signal lines from the damage caused by ESD and other transients.  
1.2 Features  
I ESD protection of up to four lines  
I ESD protection up to 30 kV  
I IEC 61000-4-2; level 4 (ESD)  
I IEC 61000-4-5 (surge); IPP = 10 A  
I AEC-Q101 qualified  
I Max. peak pulse power: PPP = 110 W  
I Low clamping voltage: VCL = 11 V  
I Ultra low leakage current: IRM = 4 nA  
1.3 Applications  
I Computers and peripherals  
I Audio and video equipment  
I Cellular handsets and accessories  
I Communication systems  
I Portable electronics  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
Per diode  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff voltage  
PESD3V3S4UF  
PESD5V0S4UF  
diode capacitance  
PESD3V3S4UF  
PESD5V0S4UF  
-
-
-
-
3.3  
5.0  
V
V
Cd  
f = 1 MHz; VR = 0 V  
-
-
110  
85  
300  
220  
pF  
pF  

PESD3V3S4UF 替代型号

型号 品牌 替代类型 描述 数据表
PESD3V3S4UF,115 NXP

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