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PESD3V3U1UL,315 PDF预览

PESD3V3U1UL,315

更新时间: 2024-11-08 15:47:47
品牌 Logo 应用领域
恩智浦 - NXP 局域网二极管
页数 文件大小 规格书
12页 81K
描述
PESD3V3U1UA; PESD3V3U1UB; PESD3V3U1UL - Ultra low capacitance unidirectional ESD protection diodes DFN 2-Pin

PESD3V3U1UL,315 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFN包装说明:1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.78最大击穿电压:6.8 V
最小击穿电压:4.5 V击穿电压标称值:5.6 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PBCC-N2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:3.3 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:40Base Number Matches:1

PESD3V3U1UL,315 数据手册

 浏览型号PESD3V3U1UL,315的Datasheet PDF文件第2页浏览型号PESD3V3U1UL,315的Datasheet PDF文件第3页浏览型号PESD3V3U1UL,315的Datasheet PDF文件第4页浏览型号PESD3V3U1UL,315的Datasheet PDF文件第5页浏览型号PESD3V3U1UL,315的Datasheet PDF文件第6页浏览型号PESD3V3U1UL,315的Datasheet PDF文件第7页 
PESD3V3U1UA;  
PESD3V3U1UB; PESD3V3U1UL  
Ultra low capacitance unidirectional ESD protection diodes  
Rev. 01 — 30 October 2008  
Product data sheet  
1. Product profile  
1.1 General description  
Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in  
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal  
line from the damage caused by ESD and other transients.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
Package configuration  
JEITA  
SC-76  
SC-79  
-
PESD3V3U1UA  
PESD3V3U1UB  
PESD3V3U1UL  
SOD323  
SOD523  
SOD882  
very small  
ultra small and flat lead  
leadless ultra small  
1.2 Features  
I Unidirectional ESD protection of one line I ESD protection up to 9 kV  
I Ultra low diode capacitance: Cd = 2.6 pF I IEC 61000-4-2; level 4 (ESD)  
I Very low leakage current: IRM = 1 nA  
I AEC-Q101 qualified  
1.3 Applications  
I USB interfaces  
I Cellular handsets and accessories  
I Portable electronics  
I 10/100/1000 Mbit/s Ethernet  
I FireWire  
I Communication systems  
I Computers and peripherals  
I High-speed data lines  
I Subscriber Identity Module (SIM) card I Audio and video equipment  
protection  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
Typ  
-
Max  
3.3  
Unit  
V
VRWM  
Cd  
reverse standoff voltage  
diode capacitance  
-
-
f = 1 MHz; VR = 0 V  
2.6  
3.1  
pF  
 
 
 
 
 

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