5秒后页面跳转
PESD3V3V4UW PDF预览

PESD3V3V4UW

更新时间: 2024-09-21 11:11:55
品牌 Logo 应用领域
安世 - NEXPERIA 二极管
页数 文件大小 规格书
16页 677K
描述
Very low capacitance unidirectional quadruple ESD protection diode arraysProduction

PESD3V3V4UW 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.77Is Samacsys:N
最大击穿电压:5.9 V最小击穿电压:5.3 V
配置:COMMON ANODE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-F5
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:16 W元件数量:4
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大重复峰值反向电压:3.3 V
表面贴装:YES技术:AVALANCHE
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

PESD3V3V4UW 数据手册

 浏览型号PESD3V3V4UW的Datasheet PDF文件第2页浏览型号PESD3V3V4UW的Datasheet PDF文件第3页浏览型号PESD3V3V4UW的Datasheet PDF文件第4页浏览型号PESD3V3V4UW的Datasheet PDF文件第5页浏览型号PESD3V3V4UW的Datasheet PDF文件第6页浏览型号PESD3V3V4UW的Datasheet PDF文件第7页 
PESDxV4UF; PESDxV4UG;  
PESDxV4UW  
Very low capacitance unidirectional quadruple ESD  
protection diode arrays  
Rev. 03 — 28 January 2008  
Product data sheet  
1. Product profile  
1.1 General description  
Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection  
diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to  
protect up to four signal lines from the damage caused by ESD and other transients.  
Table 1.  
Product overview  
Type number  
Package  
Nexperia  
SOT886  
SOT886  
SOT353  
SOT353  
SOT665  
SOT665  
Package configuration  
JEITA  
JEDEC  
PESD3V3V4UF  
PESD5V0V4UF  
PESD3V3V4UG  
PESD5V0V4UG  
PESD3V3V4UW  
PESD5V0V4UW  
-
MO-252  
leadless ultra small  
leadless ultra small  
very small  
-
MO-252  
SC-88A  
-
-
-
-
SC-88A  
very small  
-
-
ultra small and flat lead  
ultra small and flat lead  
1.2 Features  
I ESD protection of up to four lines  
I Very low diode capacitance  
I Ultra low leakage current: IRM = 25 nA  
I ESD protection up to 12 kV  
I Max. peak pulse power: PPP = 16 W  
I Low clamping voltage: VCL = 11 V  
I IEC 61000-4-2; level 4 (ESD)  
I IEC 61000-4-5 (surge); IPP = 1.5 A  
1.3 Applications  
I Computers and peripherals  
I Audio and video equipment  
I Cellular handsets and accessories  
I Communication systems  
I Portable electronics  
I Subscriber Identity Module (SIM) card  
protection  

与PESD3V3V4UW相关器件

型号 品牌 获取价格 描述 数据表
PESD3V3V4UW,115 NXP

获取价格

PESDxV4UF; PESDxV4UG; PESDxV4UW - Very low capacitance unidirectional quadruple ESD protec
PESD3V3W1BCSF NEXPERIA

获取价格

Extremely low capacitance bidirectional ESD protection diodeProduction
PESD3V3X1BCSF NEXPERIA

获取价格

Ultra low capacitance bidirectional ESD protection diodeProduction
PESD3V3X1BL NXP

获取价格

Ultra low capacitance bidirectional ESD protection diode
PESD3V3X1BL NEXPERIA

获取价格

Ultra low capacitance bidirectional ESD protection diodeProduction
PESD3V3X2UT NEXPERIA

获取价格

ESD protection diodeProduction
PESD3V3X4UHC NEXPERIA

获取价格

4-fold ESD protection array for high-speed interfacesProduction
PESD3V3X4UHM NEXPERIA

获取价格

4-fold ESD protection array for SD-card protectionProduction
PESD3V3Y1BSF NEXPERIA

获取价格

Extremely low capacitance bidirectional ESD protection diodeProduction
PESD3V3Z1BCSF NEXPERIA

获取价格

Extremely low capacitance bidirectional ESD protection diodeProduction