Datasheet > PESD4USB3UCTBR-Q

PESD4USB3UCTBR-Q

更新时间： 2024-11-03 17:01:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	1389K
描述
Extremely low capacitance unidirectional ESD protection diode arrayProduction

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PESD4USB3UCTBR-Q 数据手册

PESD4USB3UCTBR-Q

Extremely low capacitance unidirectional ESD protection

diode array

26 October 2023

Product data sheet

1. General description

This unidirectional ESD protection device is designed to protect high-speed interfaces such as

SuperSpeed USB 3.2, HDMI, DisplayPort, external Serial Advanced Technology Attachment

(eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL)

Serializer/Deserializer (SerDes) against ElectroStatic Discharge (ESD).

The device is encapsulated in a leadless small DFN2510A-10 (SOT1176-2) plastic package and

provides ESD protection up to 15 kV exceeding IEC 61000-4-2 level 4 and fulfilling ISO 10605.

2. Features and benefits

•

Unidirectional ESD protection for four signal lines

•

V_RWM= 3.3 V device

Extremely low clamping voltage to protect sensitive I/Os

Extremely low clamping voltage: 2.8 V for 8 A 100 ns TLP and 4.4 V for 16 A 100 ns TLP

IEC 61000-4-4 robust up to 36 A into a 50 Ohm termination (1.8 kV)

IEC 61000-4-5 (surge): I_PP= 8.2 A peak pulse (average measured)

Typical line capacitance of only 0.29 pF

ESD protection up to ±15 kV according to IEC 61000-4-2

Leadless ultra small DFN2510A-10 (SOT1176-2) surface mount package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Infotainment applications: USB 2.0, USB 3.2 and HDMI 2.1

Automotive A/V monitors, display and cameras

SerDes: GMSL, APIX, FPD-Link and LVDS

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

-0.5

3.3

C_d

diode capacitance

f = 1 MHz; V_R= 1.5 V; T_amb= 25 °C

[1]

0.29

0.34

[1] Measured on pin 1

12 3 4 5 6 7...15

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